AO4240 40v n-channel mosfet general description product summary v ds i d (at v gs =10v) 24a r ds(on) (at v gs =10v) < 3.3m w r ds(on) (at v gs =4.5v) < 4.3m w 100% uis tested 100% r g tested symbol v ds the AO4240 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and crss. in addition,switching behavior is well controlled with a "schottky style" soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 40v drain-source voltage 40 g ds soic-8 top view bottom view d d d d s s s g v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c mj avalanche current c 281 a 75 a i d 24 19 170 v v 20 gate-source voltage drain-source voltage 40 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a thermal characteristics w 3.1 2 t a =70c junction and storage temperature range -55 to 150 c rev 0: feb. 2012 www.aosmd.com page 1 of 6
AO4240 symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.7 2.3 v i d(on) 170 a 2.7 3.3 t j =125c 4 4.9 3.4 4.3 m w g fs 90 s v sd 0.67 1 v i s 4.5 a c iss 4245 pf c oss 1170 pf c rss 69 pf r g 0.5 1 1.5 w q g (10v) 62 87 nc q g (4.5v) 28 40 nc q gs 10.5 nc q gd 8 nc t d(on) 9 ns t 11.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a forward transconductance diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v =10v, v =20v, r =1.0 w , reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =20v, i d =20a gate source charge gate drain charge total gate charge t r 11.5 ns t d(off) 42 ns t f 21 ns t rr 23 ns q rr 74 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =20a, di/dt=500a/ m s turn-off fall time v gs =10v, v ds =20v, r l =1.0 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: feb. 2012 www.aosmd.com page 2 of 6
AO4240 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0: feb. 2012 www.aosmd.com page 3 of 6
AO4240 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 0 10 20 30 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =20v i d =20a 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c figure 10: maximum forward biased safe operating area (note f) (note c) rev 0: feb. 2012 www.aosmd.com page 4 of 6
AO4240 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w rev 0: feb. 2012 www.aosmd.com page 5 of 6
AO4240 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0: feb. 2012 www.aosmd.com page 6 of 6
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